Process Development at IQE Silicon
 

Development of epitaxial processes at IQE Silicon is supported by IQE plc - a company with over 15 years experience as world leaders in custom epitaxy.

With state of the art, single wafer deposition systems (ASM Epsilon 2000) IQE Silicon is able to provide its customers with leading edge process development services for advanced silicon and SiGe epitaxy.

Our comprehensive set of metrology tools enables full characterization of our epitaxial films throughout the development stage. Additionally, continuous technical interaction between IQE engineers and its customers allows processes to be tuned to meet target specifications.

Engineering ‘split lots’ in which key film parameters such as film thickness and dopant concentration are varied can also be provided.

IQE Silicon’s internal process development of high mobility strained silicon substrates has resulted in a range of world leading products which are currently being qualified for sub-100nm technology nodes (insert sSi hyperlink).

Joint development activities with Epitech Ltd. are focused on selective epitaxial processes for elevated source/drain (insert Epitech hyperlink).

However ambitious your epitaxy requirements are, you can be confident that IQE Silicon has both the advanced tools and the process know-how to provide them. If you would like to discuss your requirements with our technical support team they can be reached at (insert techsupport link).